Location
University of Utah
Start Date
5-8-2000 10:00 AM
Description
We report the growth of boron nitride thin films from plasma-assisted dissociation of the precursor molecule boron triazide. Stable films containing mainly sp2-bonded BN have been grown for comparison with films grown by other dissociation methods. We conclude that the plasma-assisted dissociation method is superior to previous methods for growing boron nitride thin films from boron triazide.
Low Energy Methods for the Deposition of BN Thin Films
University of Utah
We report the growth of boron nitride thin films from plasma-assisted dissociation of the precursor molecule boron triazide. Stable films containing mainly sp2-bonded BN have been grown for comparison with films grown by other dissociation methods. We conclude that the plasma-assisted dissociation method is superior to previous methods for growing boron nitride thin films from boron triazide.