Location

University of Utah

Start Date

8-5-2000 10:00 AM

Description

We report the growth of boron nitride thin films from plasma-assisted dissociation of the precursor molecule boron triazide. Stable films containing mainly sp2-bonded BN have been grown for comparison with films grown by other dissociation methods. We conclude that the plasma-assisted dissociation method is superior to previous methods for growing boron nitride thin films from boron triazide.

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May 8th, 10:00 AM

Low Energy Methods for the Deposition of BN Thin Films

University of Utah

We report the growth of boron nitride thin films from plasma-assisted dissociation of the precursor molecule boron triazide. Stable films containing mainly sp2-bonded BN have been grown for comparison with films grown by other dissociation methods. We conclude that the plasma-assisted dissociation method is superior to previous methods for growing boron nitride thin films from boron triazide.