Analogue Fractional-Order Generalized Memristive Devices
ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference
The American Society of Mechanical Engineers
San Diego, CA
Memristor is a new electrical element which has been predicted and described in 1971 by Leon O. Chua and for the first time realized by HP laboratory in 2008. Chua proved that memristor behavior could not be duplicated by any circuit built using only the other three elements (resistor, capacitor, inductor), which is why the memristor is truly fundamental. Memristor is a contraction of memory resistor, because that is exactly its function: to remember its history. The memristor is a two-terminal device whose resistance depends on the magnitude and polarity of the voltage applied to it and the length of time that voltage has been applied. The missing element—the memristor, with memristance M—provides a functional relation between charge and flux, dφ = Mdq. In this paper, for the first time, the concept of (integer-order) memristive systems is generalized to non-integer order case using fractional calculus. We also show that the memory effect of such devices can be also used for an analogue implementation of the fractional-order operator, namely fractional-order integral and fractional-order derivatives. This kind of operators are useful for realization of the fractional-order controllers. We present theoretical description of such implementation and we proposed the practical realization and did some experiments as well.
Coopmans, Calvin; Petráš, Ivo; and Chen, YangQuan, "Analogue Fractional-Order Generalized Memristive Devices" (2009). AggieAir Presentations. Paper 52.