Scanning Electron Microscopy


A Monte Carlo simulation of the scattering processes of kV electrons penetrating into aluminum was performed. The simulation is based on the use of different types of differential cross-sections for individual elastic and inelastic scattering: (i) the differential cross-sections derived by the partial wave expansion method for elastic scattering, (ii) Gryzinski's excitation function for inner-shell electron excitation, (iii) Streitwolf's excitation function for conduction electron excitation, (iv) Quinn's mean free path for plasmon excitation.

The main purpose of this work is to see how accurately the present direct Monte Carlo simulation describes the backscattered electrons from Al, which is the most important factor for making quantitative Auger electron spectroscopy more reliable.

The calculations were done for incident electron energies of 1.5 and 3 keV at angles of incidence 0° (normal) and 45°, respectively. Experiments were also performed using two Auger Scanning Electron Microscopes (SEM) JAMP-10 (for normal incidence) and JAMP-3 (for 45° incidence) to verify the theoretical calculations with comparison of N(E)-spectra.

The results show satisfactory agreement between theory and experiment. This suggests that the present direct Monte Carlo simulation describes the scattering processes of kV electrons in aluminum and the background intensity in Auger electron spectroscopy with considerable accuracy.

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