Experimental apparatus has been designed to study the solid state electron beam chemistry of lithographic materials. Thin organic films are simultaneously analyzed in situ with several different spectroscopic tools throughout the electron beam exposure. The equipment has enabled us to determine, in situ, the reaction paths for product formation when organic films are irradiated with high energy (25 keV) electron beams. In addition, cross sections for the electron beam chemistry are defined by monitoring the changes in optical absorption for a molecular species as a function of incident electron beam dose; these are very useful for providing a direction for synthesis of new materials. Studies using the methods described above are presented for an important lithographic system, AZ-type resists which contain diazo ketones as sensitizers.
Pacansky, Jacob; Gutierrez, Adolfo; and Kroeker, Richard
"Electron Beam Induced Chemistry of Lithographic Materials,"
Scanning Electron Microscopy: Vol. 1982
, Article 29.
Available at: https://digitalcommons.usu.edu/electron/vol1982/iss1/29