Electron-beam-induced-current (EBIC) analysis of integrated circuits and of individual semiconductor devices has become an essential technique for semiconductor device characterization as well as for failure analysis and diagnostics. This tutorial is an update of the paper presented in SEM/1981/I on the same topic and discusses advances and new trends in the applications of EBIC in recent months. Examples of EBIC measurements on high density chips, ion-implanted junctions, and shallow diffusions in thin epitaxial layers are given. Time resolved EBIC (TREBIC) is also explained and new digital readout techniques, including computer-aided data analysis, are described as they refer to detailed analyses of depletion regions associated with P-N junctions.
Schick, J. D.
"Advances in Electron-Beam-Induced-Current Analysis of Integrated Circuits,"
Scanning Electron Microscopy: Vol. 1985
, Article 6.
Available at: https://digitalcommons.usu.edu/electron/vol1985/iss1/6