Scanning Electron Microscopy


Some aspects of the influence of the energy of the incident electrons in electron energy loss spectroscopy (EELS) are considered. It is shown that this method of analysis used in high voltage electron microscopy, permits one to observe, with a better edge jump ratio than at lower accelerating voltages, the characteristic edges. One important question is to eliminate artefacts in the counting and to record only electrons from the true spectrum. Some recent examples are given. One of them concerns extended energy loss fine structures (EXELFS). It seems high voltage electron microscopy (HVEM) could be very useful in this domain.

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