Scanning Electron Microscopy


L23VV Auger transition has been studied in Si, SiO2, Al, AlN, Al2O3 by electron spectroscopy excited either by electron beam or X Rays. A strong difference is observed in intensity between pure solid and oxide or nitride under electron bombardment. Auger intensity is very sensitive to changes in the backscattering coefficient or inelastic mean free path. However transient local trapping of electrons seems to be responsible for the large change observed.

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