The capabilities of the cathodoluminescence mode of the scanning electron microscope are reviewed, with particular reference to the low temperature wavelength dispersive system in the author's own laboratory. The design of the luminescence collection optics is highlighted. The interpretation of the luminescence spectra is discussed in terms of the physics of radiative recombination. We offer some solutions to some of the main experimental problems with illustrations drawn from two case studies. The first is a study of the elimination of dopant striations in dislocation-free germanium doped indium phosphide and the second an analysis of the causes of threshold voltage scattering in GaAs Schottky-gated field effect transistors. Future directions of the technique are speculated upon.
Warwick, C. A.
"Recent Advances in Scanning Electron Microscope Cathodoluminescence Assessment of GaAs and InP,"
Scanning Microscopy: Vol. 1
, Article 6.
Available at: https://digitalcommons.usu.edu/microscopy/vol1/iss1/6