Micrographic Fracture Characterization of Gallium Arsenide Wafers

Authors

H. E. Belsinger Jr., University of Maryland Baltimore County
L. D. T. Topoleski, University of Maryland Baltimore County
B. Wilner, University of Maryland Baltimore County

Abstract

Single crystal gallium arsenide (GaAs) specimens were loaded to failure. Scanning electron microscope examination of fracture surfaces showed that GaAs fails in a brittle manner on {110} planes. Features on these fracture surfaces were used to identify preexisting (critical) flaws that potentially initiated fracture when loaded by tensile stresses. Critical flaws in each specimen were identified by comparison to an intentionally damaged control. The size and shape of critical defects were consistent with existing failure models.

Recommended Citation

Belsinger, H. E. Jr.; Topoleski, L. D. T.; and Wilner, B. (1996) "Micrographic Fracture Characterization of Gallium Arsenide Wafers," Scanning Microscopy: Vol. 10: No. 2, Article 2.
Available at: https://digitalcommons.usu.edu/microscopy/vol10/iss2/2