Two contact mode atomic force microscopic (AFM) techniques under ambient conditions are presented for the electrical evaluation of cross sectioned silicon devices. In the first technique, a conductive AFM tip is used as a voltage probe to determine the local potential distribution on the cross section of a silicon device under operation. The electrical potential is measured simultaneously with the surface topography with nanometer resolution and mV accuracy, offering an easy way of correlating topographic and electrical features. A second method, nanometer spreading resistance profiling (nano-SRP), performs localized spreading resistance measurements to determine the spatial distribution of charge carriers in silicon structures. The conversion of the resistance profiles into charge carrier profiles as well as the applied correction factors are discussed in more detail. Both methods are used to map electrical characteristics of state-of-the-art silicon structures.
De Wolf, P.; Trenkler, T.; Clarysse, T.; Caymax, M.; Vandervorst, W.; Snauwaert, J. J.; and Hellemans, L.
"Electrical Characterization of Submicrometer Silicon Devices by Cross-Sectional Contact Mode Atomic Force Microscopy,"
Scanning Microscopy: Vol. 10
, Article 2.
Available at: https://digitalcommons.usu.edu/microscopy/vol10/iss4/2