A new Monte Carlo calculation model is introduced to simulate not only the primary electron behavior but also the secondary electron cascade in a specimen bombarded with an electron beam. Either the primary or the generated electron in a specimen having energy greater than 0.1 keV is defined as a fast electron and the single scattering model is used in the simulation which employs the Mott elastic scattering cross section and the Rao Sahib-Wittry energy loss equation. The electron having energy smaller than 0.1 keV is defined as a slow electron and the cascade model is used which takes into account the classical binary collision with the conduction electrons. The performance of this simulation is verified in comparison with experiments for energy and angular distributions of slow secondary electrons (<50eV). Then, this simulation is applied in a discussion of the quantitative signal variation of the secondary and the backscattered electrons depending on a specimen surface topography. The maximum intensity of the secondary electron signal is obtained where the scanning electron beam reaches around 1nm beside the top edge of a surface step made of Cu with the vertical side wall of 500nm in height.
Kotera, M.; Kishida, T.; and Suga, H.
"Monte Carlo Simulation of Secondary Electrons in Solids and its Application for Scanning Electron Microscopy,"
Scanning Microscopy: Vol. 1990
, Article 8.
Available at: https://digitalcommons.usu.edu/microscopy/vol1990/iss4/8