Applications of Charge Collection Microscopy: Electron-Beam-Induced Current to Semiconductor Materials and Device Research

Authors

Richard J. Matson, National Renewable Energy Laboratory, Colorado

Abstract

Among all of the possible techniques for the micro-characterization of semiconductor materials and devices in a scanning electron microscope (SEM), charge collection microscopy (CCM), more commonly known as electron-beam-induced current (EBIC), is probably both the most easily deployed and the most versatile characterization technique. Following a brief review of the basic theory of the generation and detection of the EBIC signals, various techniques and applications to the micro-characterization of experimental semiconductor materials and devices will be presented. The applications are primarily to emerging photovoltaic materials and devices. This report is not in any way intended as a complete overview of all EBIC related techniques or most material or device applications. Beyond offering a short review of CCM theory, this paper complements the literature (1) as a basic introduction to CCM, and (2) by focusing on the use and extension of CCM techniques for basic studies in experimental electronic materials.

Recommended Citation

Matson, Richard J. (1993) "Applications of Charge Collection Microscopy: Electron-Beam-Induced Current to Semiconductor Materials and Device Research," Scanning Microscopy: Vol. 1993: No. 7, Article 16.
Available at: https://digitalcommons.usu.edu/microscopy/vol1993/iss7/16