Anisotropic Secondary Electron Emission from Si(100) Surface Observed by Ultrahigh Vacuum Scanning Electron Microscopy

Authors

Yoshikazu Homma, NTT Interdisciplinary Research Laboratories, Tokyo

Abstract

The effect of surface atomic structure on secondary electron (SE) emission from a Si(100)2 X 1 surface is studied using an ultrahigh vacuum scanning electron microscope with an SE detector having angular resolvability. The double domain structure, alternate 2 X 1 and 1 X 2 domains, can be clearly imaged by SEs, indicating that the SE emission varies with the orientation of dimer rows on Si(100) surface: higher intensity in the direction parallel to the dimer rows and lower intensity in the perpendicular direction. The present results demonstrate that the SE emission is greatly influenced by the atomic configuration in the topmost layer.

Recommended Citation

Homma, Yoshikazu (1993) "Anisotropic Secondary Electron Emission from Si(100) Surface Observed by Ultrahigh Vacuum Scanning Electron Microscopy," Scanning Microscopy: Vol. 1993: No. 7, Article 2.
Available at: https://digitalcommons.usu.edu/microscopy/vol1993/iss7/2