Scanning Microscopy


Time-resolved magnetoluminescence investigations of specially doped AlGaAs/GaAs heterostructures allow the study of the electronic properties of two-dimensional electrons. The interactions of the two-dimensional electrons lead in high magnetic fields to the fractional quantum Hall effect. By analyzing the mean energy of the recombination line observed in the luminescence spectrum, the electronic properties of the fractional quantized states can be deduced. For negligible interaction between the charged acceptors and the interacting electron system, the derivative of the mean energy versus filling factor allows to obtain the jump of the chemical potential in crossing a fractional filling factor. From these jumps, the gaps in the excitation spectrum are deduced for different fractional filling factors and the hierarchy of the fractional quantum Hall effect is studied.

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