Recent low temperature a-Si:H photoluminescence experiments show the presence of two peaks in the lifetime distribution, and a dependence of the efficiency on generation rate. These results contradict every existing model of amorphous semiconductor photoluminescence. The reason for the discrepancy is that every model predicts diffusive motion of the photo-generated pairs. We show how the inclusion of coulomb interaction between photocarriers, spin selection effects, and Auger recombination gives back agreement of theory with experiment. This new picture of the phenomenon also explains the transient behavior of the luminescence intensity.
Kemp, Mathieu and Silver, Marvin
"A New Model of Low Temperature Photoluminescence in Amorphous Semiconductors,"
Scanning Microscopy: Vol. 1995
, Article 5.
Available at: https://digitalcommons.usu.edu/microscopy/vol1995/iss9/5