Scanning tunneling microscope (STM)-induced luminescence is explored as a technique for the characterization of semiconductor quantum wells and quantum wire heterostructures. By injecting minority carriers into the cleaved cross section of these structures, luminescence excitation on a nanometer scale is demonstrated. Using spectrally resolved STM-induced luminescence for the tip placed at various positions across the cleaved heterostructure, it is possible to obtain local spectroscopic information on closely spaced quantum structures.
Pfister, M.; Johnson, M. B.; Marti, U.; Alvarado, S. F.; Salemink, H. W. M.; Martin, D.; Morier-Genoud, F.; and Reinhart, F. K.
"Scanning Tunneling Microscope-Induced Luminescence Spectroscopy on Semiconductor Heterostructures,"
Scanning Microscopy: Vol. 1995
, Article 6.
Available at: https://digitalcommons.usu.edu/microscopy/vol1995/iss9/6