Electrically active defects in indium-doped (0.6%) GaAs layers grown by Molecular Beam Epitaxy (MBE) on Si-doped (≈1x1018 cm-3) GaAs substrates have been studied by the combination of two techniques: Scanning Electron Microscope - Electron Beam Induced Current (SEM-EBIC) technique, and Deep Level Transient Spectroscopy (DLTS). The epilayers studied were three microns thick. No electrically active defects were revealed by the EBIC micrographs in the top one micron of the epilayers, whereas a large number of non-propagating misfit dislocations were observed at the epilayer/substrate interface. DLTS measurements made in the dislocation free top region of the epilayer showed the presence of three well known traps, which had previously been observed to also exist near the interface. It is concluded that these traps are not related to misfit dislocations.
Huang, Y. J.; Ioannou, Dimitris E.; and Iliadis, A.
"Scanning Electron Microscopy - Electron Beam Induced Current and Deep Level Transient Spectroscopy Studies of GaAs(In) Layers grown by Molecular Beam Epitaxy,"
Scanning Microscopy: Vol. 2
, Article 13.
Available at: https://digitalcommons.usu.edu/microscopy/vol2/iss1/13