Low energy cathodoluminescence spectroscopy (CLS) is a powerful new technique for characterizing the electronic structure of "buried" semiconductor interfaces. This extension of a more conventional electron microscopy technique provides information on localized states, deep level defects, and band structure of new compounds at interfaces below the free solid surface. From the energy dependence of spectral features, one can distinguish interface versus bulk state emission and assess the relative spatial distribution of states below the free surface. Low energy CLS reveals process changes in the electronic structure of semiconductor interfaces due to metallization, laser annealing, and thermal desorption. Spectral features of metal-semiconductor interfaces uncovered by CLS also provide a new perspective on physical mechanisms of Schottky barrier formation.
Brillson, L. J. and Viturro, R. E.
"Low Energy Cathodoluminescence Spectroscopy of Semiconductor Interfaces,"
Scanning Microscopy: Vol. 2
, Article 14.
Available at: https://digitalcommons.usu.edu/microscopy/vol2/iss2/14