Contribution of Densely Distributed Electron Beam Induced Current Contrasts in Annealed Cz Silicon to Bulk Recombination

Authors

M. Kittler, Academy of Sciences of the GDR Institute of Semiconductor Physics
W. Seifert, Academy of Sciences of the GDR Institute of Semiconductor Physics

Abstract

The paper presents a detailed analysis of Electron Beam Induced Current (EBIC) diffusion-length and contrast data for samples containing defect accumulations. The formulae given allow one to estimate to which extent the average diffusion length is determined by recombination-active defects showing EBIC contrast.

This analysis may be used to identify essential sources of bulk recombination in annealed silicon. In the light of our results stacking faults are an essential source of bulk recombination in intrinsically gettered p-type Cz silicon.

Recommended Citation

Kittler, M. and Seifert, W. (1988) "Contribution of Densely Distributed Electron Beam Induced Current Contrasts in Annealed Cz Silicon to Bulk Recombination," Scanning Microscopy: Vol. 2: No. 3, Article 16.
Available at: https://digitalcommons.usu.edu/microscopy/vol2/iss3/16