Defect induced inversion of conductivity type was studied both at the surface and at a network of interfacially confined misfit dislocations in heteroepitaxial Si(Ge) on Si structures. The inversion was achieved by controlled contamination with Au and Ni metallic impurities introduced by diffusion from backside evaporated layers. A theoretical explanation of the defect electrical activity and the inversion effect is presented, along with temperature dependent beam induced current observations.
Radzimski, Z. J.; Buczkowski, A.; Zhou, T. Q.; Dubé, C.; and Rozgonyi, G. A.
"Electron Beam Induced Current Studies of Defect Induced Conductivity Inversion,"
Scanning Microscopy: Vol. 7
, Article 7.
Available at: https://digitalcommons.usu.edu/microscopy/vol7/iss2/7