Calculations have been made for the electron acoustic signal in the case of one and two metallic layers deposited over a semiconductor substrate. The temperature distribution as function of the depth has been determined by taking into account the power absorbed in the metallic layers and the substrate. We have considered strain-free and constrained layers. Experimental results have been obtained for a single metallic layer (Au, W, Pd, Mo, Mn, Ti) deposited over GaAs and for Au-Ti contacts. Comparison between experiments and calculations allows us to determine whether the layers are constrained or not.
Bresse, J. F.
"Electron Acoustic Signal of Metallic Layers Over a Semiconductor Substrate,"
Scanning Microscopy: Vol. 7
, Article 8.
Available at: https://digitalcommons.usu.edu/microscopy/vol7/iss2/8