Scanning Microscopy


An ultra-high vacuum scanning electron microscope (UHV-SEM) has been used to study sub-monolayers of Cs on Si(100) surface. Cs adsorption on the surface causes a considerable change in the work function. Coverages below 1/2 monolayer (ML) have been estimated by correlating the work function changes with the secondary electron (SE) signal. It has been found that this signal is sensitive down to ~ 0.005 ML when the sample is biassed to a few hundred volts.

Electron trajectories from a biassed sample have been simulated for electrons originating from different areas with different work functions across the sample. This indicates that variations in coverage can be determined by secondary electron imaging provided these coverages are less than 1/2 ML.

The diffusion of Cs (< 1/2 ML) above room temperature has been studied using the biassed-SE imaging technique. Observed diffusion profiles have unusual features including two linear regions. These can be explained by a model which contains two competing adsorption sites, and includes blocking of the diffusion paths by other Cs atoms.

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