Recently, the first results of electron beam induced current (EBIC) measurements in a scanning tunneling microscope (STM) have been reported. Although the acquired results match with those obtained in conventional EBIC investigations, the interpretation of the obtained results is still restricted solely to a qualitative discussion. In this paper, a quantitative approach is used for two-dimensional numerical simulations of induced currents in GaAs-MESFET leading to a first starting point for a sophisticated interpretation of the dependence of induced currents on experimental and device parameters.
Koschinski, P.; Dworak, V.; and Balk, L. J.
"High Resolution Electron Beam Induced Current Measurements in an Scanning Tunneling Microscope on GaAs-MESFET,"
Scanning Microscopy: Vol. 8
, Article 3.
Available at: https://digitalcommons.usu.edu/microscopy/vol8/iss2/3