In spite of being a surface sensitive tool, low energy electron microscopy (LEEM) can also give information on interfaces. An example is the CoSi2/Si(111) interface. Most of the work discussed in this paper, however, makes use of the high surface sensitivity of LEEM which makes this method an ideal tool for the study of the early growth stages in epitaxy, in particular of the growth dynamics and of the influence of misfit on the growth mode. Two prototype substrates, Mo(110) and Si(111), and three representative deposit metals, Cu, Au and Co, are used to illustrate the large variety of phenomena which can occur in epitaxial growth.
"Epitaxial Growth Studies by Low Energy Electron Microscopy,"
Scanning Microscopy: Vol. 8
, Article 2.
Available at: https://digitalcommons.usu.edu/microscopy/vol8/iss4/2