Scanning probe microscopy is opening new applications in microelectronic engineering due to easy and reliable instrumentation in combination with superior resolution limits without any sample preparation under ambient conditions. Beside the standard topography imaging possible application are static and dynamic surface potential measurements, doping profiling, and scanning thermal applications. In this paper, we report dynamic voltage contrast measurements of analog and digital gigahertz signals on 200 nm wave guides within integrated microelectronic devices and components. The results are obtained by using a time resolved device internal test technique based on a scanning force microscope using the electrostatic force interaction. This technique enables voltage contrast even within passivated integrated circuits with nanometer spatial resolution and gigahertz measurement bandwidth and additionally millivolt sensitivity.
Böhm, C.; Sprengepiel, J.; and Kubalek, E.
"Scanning Probe Microscope Gigahertz Measurements on 200 Nanometer Wave Guides,"
Scanning Microscopy: Vol. 9
, Article 4.
Available at: https://digitalcommons.usu.edu/microscopy/vol9/iss4/4