There are six distinguishable types of charge collection (CC) signal. Consequently specially designed CC detection systems are needed to obtain e.g. true EBIC and EBIV measurements and make quantitative electrical microcharacterization possible. EBIC and EBIV can arise from fields due to barriers such as p-n junctions or due to changes in doping e.g. p to p+. Materials, defect and device parameters are calculable from these signals. Hot-cold stages are important for temperature dependence studies of contrast, for improving signal to noise ratios and reducing leakage currents. Image processing and pattern recognition methods are vital for rapidly locating and evaluating the information in CC micrographs of large scale circuits. Some recent applications of these techniques to junctions and Schottky barriers in devices, to dislocations and grain boundaries, to microplasmas and to the location of defects in large scale intergration (LSI) devices are presented.
Holt, D. B. and Lesniak, M.
"Recent Developments in Electrical Microcharacterization Using the Charge Collection Mode of the Scanning Electron Microscope,"
Scanning Electron Microscopy: Vol. 1985
, Article 7.
Available at: https://digitalcommons.usu.edu/electron/vol1985/iss1/7