Scanning Electron Microscopy
Abstract
A rapid and automated inspection system is a necessity for the detection of defects in x-ray and optical lithography masks. The design of an electron-beam mask inspection system requires a complete understanding of the backscattered electron signal from the various defects which will be encountered. A Monte Carlo simulation program has been used to study the effects of electron-beam size, detector placement, defect type, electron-beam voltage, and absorber thickness on the back-scattered electron signal.
Recommended Citation
Rosenfield, Michael G.
(1985)
"Analysis of Backscattered Electron Signals for X-Ray Mask Inspection,"
Scanning Electron Microscopy: Vol. 1985:
No.
2, Article 12.
Available at:
https://digitalcommons.usu.edu/electron/vol1985/iss2/12