Transmission Electron Microscopy of Semiconductor Materials and Devices

Authors

R. B. Marcus, Bell Communications Research, Inc.

Abstract

This paper surveys the application of transmission electron microscopy (TEM) to semiconductor materials and device technology. A broad spectrum of TEM studies requires the preparation of either plan-view or vertical sections; these sections are made using mechanical abrasion, chemical etching or ion milling or a combination of these procedures. A survey is then given of applications of TEM to four classes of studies of semiconductor materials and devices: the configuration of device features, crystallographic defects, lattice and atomic resolution imaging, and the analysis of phase and chemical composition.

Recommended Citation

Marcus, R. B. (1985) "Transmission Electron Microscopy of Semiconductor Materials and Devices," Scanning Electron Microscopy: Vol. 1985: No. 3, Article 10.
Available at: https://digitalcommons.usu.edu/electron/vol1985/iss3/10