Divergent-Beam X-Ray Diffraction in the Scanning Electron Microscopy and its Use for the Study of the Semiconductor Epitaxial Layers

Authors

J. Hejna, Technical University of Wroclaw

Abstract

Among the X-ray techniques belonging to the family of Kassel methods the divergent-beam diffraction method gives the best contrast for semiconductor specimens.

The technique has been accomplished in the scanning electron microscope (SEM) in a back reflection configuration. Epitaxial layers of GaAsSb and GaAsSbP on GaAs [100] oriented substrates were investigated. The diffraction lines from lattice planes giving only high Bragg angles were used. For the purpose of the layer strain analysis, the diffraction experiments were carried out for specimens placed horizontally (the lines {711} type recorded) and for tilted 45° (the lines {551) type recorded). A Cu foil was used as a target material.

Recommended Citation

Hejna, J. (1985) "Divergent-Beam X-Ray Diffraction in the Scanning Electron Microscopy and its Use for the Study of the Semiconductor Epitaxial Layers," Scanning Electron Microscopy: Vol. 1985: No. 3, Article 20.
Available at: https://digitalcommons.usu.edu/electron/vol1985/iss3/20