Intensity of Valence Auger Transitions (L23VV) of Al and Si in Metal, Oxide and Nitride

Authors

M. Gautier, Centre d'Etudes Nucléaires de Saclay
C. Quennisset, Laboratoire de Microanalyse par sondes électroniques
J. P. Duraud, Centre d'Etudes Nucléaires de Saclay
J. P. Vigouroux, Centre d'Etudes Nucléaires de Saclay
C. Le Gressus, Centre d'Etudes Nucléaires de Saclay

Abstract

L₂₃VV Auger transition has been studied in Si, SiO₂, Al, AlN, Al₂O₃ by electron spectroscopy excited either by electron beam or X Rays. A strong difference is observed in intensity between pure solid and oxide or nitride under electron bombardment. Auger intensity is very sensitive to changes in the backscattering coefficient or inelastic mean free path. However transient local trapping of electrons seems to be responsible for the large change observed.

Recommended Citation

Gautier, M.; Quennisset, C.; Duraud, J. P.; Vigouroux, J. P.; and Le Gressus, C. (1986) "Intensity of Valence Auger Transitions (L23VV) of Al and Si in Metal, Oxide and Nitride," Scanning Electron Microscopy: Vol. 1986: No. 1, Article 10.
Available at: https://digitalcommons.usu.edu/electron/vol1986/iss1/10