Concerning the Problem of High Depth Resolution Using Ion Sputtering

Authors

G. Blaise, Université de Paris-Sud

Abstract

The inhomogeneity of ion bombardment, the angular dependence of sputtering yields and the crystalline orientation of samples are the three main causes of the degradation of resolution with depth. It is possible to reduce these effects by bombarding at low energy (≈ 1 keV). A low-energy ion-bombardment device is described which has been adapted for use on our sputtered thermal-ion source mass spectrometer.

Recommended Citation

Blaise, G. (1986) "Concerning the Problem of High Depth Resolution Using Ion Sputtering," Scanning Electron Microscopy: Vol. 1986: No. 1, Article 13.
Available at: https://digitalcommons.usu.edu/electron/vol1986/iss1/13