Beam Voltage Effects in the Study of Embedded Biological Materials by Secondary Electron Detectors

Authors

C. Scala, University of Bologna
G. Pasquinelli, University of Bologna
P. Preda, University of Bologna
R. Laschi, University of Bologna

Abstract

Thin and semithin sections were extensively examined by the secondary electron (SE) detector in a conventional scanning electron microscope (SEM), and in a transmission electron microscope with a scanning attachment (STEM). Various para-meters, in particular the beam voltage, were shown to affect the final SE image (SEI). As for SEM observation, a surface contrast was imaged at low primary electron (PE) voltages (0.6-2 kV), whereas a subsurface contrast predominated at higher energies (15-30 kV). In STEM, significant differences were not detected by varying the PE in the 20-100 kV range. Surface and subsurface in-formation was simultaneously imaged even though the SEI were better resolved at the highest energy.

Recommended Citation

Scala, C.; Pasquinelli, G.; Preda, P.; and Laschi, R. (1986) "Beam Voltage Effects in the Study of Embedded Biological Materials by Secondary Electron Detectors," Scanning Electron Microscopy: Vol. 1986: No. 3, Article 17.
Available at: https://digitalcommons.usu.edu/electron/vol1986/iss3/17