Influence of Ion Implantation and Gas Exposure on the Charge in Silicon Oxide Created by Electronic Excitation

Authors

J. P. Vigouroux, Centre d'Etudes Nucléaires de SACLAY
F. Jollet, Centre d'Etudes Nucléaires de SACLAY
J. P. Duraud, Centre d'Etudes Nucléaires de SACLAY
C. Le Gressus, Centre d'Etudes Nucléaires de SACLAY

Abstract

Low energy electron bombardment of amorphous SiO₂ induces point defects such as oxygen vacancy by electronic excitation. The defects build a macroscopic negative charge by trapping of electrons on the localized levels in the band gap; this phenomenon was previously described as the "mirror" effect. In the present paper, we investigate, by mirror effect, the behavior of the charge after an argon, nitrogen and oxygen implantation at 1 and 4 keV, and after exposure to the same gases at various low pressures. We observe a difference of behavior between Ar (or N₂) and O₂, The results reinforce the outstanding role of oxygen in the defect production in SiO₂ by electronic excitation.

Recommended Citation

Vigouroux, J. P.; Jollet, F.; Duraud, J. P.; and Le Gressus, C. (1986) "Influence of Ion Implantation and Gas Exposure on the Charge in Silicon Oxide Created by Electronic Excitation," Scanning Electron Microscopy: Vol. 1986: No. 4, Article 7.
Available at: https://digitalcommons.usu.edu/electron/vol1986/iss4/7