Electron Beam Deflection Without Off-Axis Aberrations

Authors

H. C. Pfeiffer, IBM General Technology Division
M. A. Sturans, IBM General Technology Division

Abstract

A novel focusing/deflection system for high accuracy, high throughput E-beam lithography, denoted as Variable Axis Immersion Lens (VAIL), has been successfully demonstrated. The main attributes of this system include: l) Perpendicular landing at all points of a deflection field > (10 x 10 mm), 2) Elimination of transverse chromatic aberration, 3) High resolution ( < 0.2μm edge slope) over the entire deflection field, 4) Elimination of eddy current effects in the target area, and 5) Total magnetic shielding of the target from external fields.

Recommended Citation

Pfeiffer, H. C. and Sturans, M. A. (1984) "Electron Beam Deflection Without Off-Axis Aberrations," Scanning Electron Microscopy: Vol. 3: No. 1, Article 11.
Available at: https://digitalcommons.usu.edu/electron/vol3/iss1/11