Scanning Electron Microscopy


A novel focusing/deflection system for high accuracy, high throughput E-beam lithography, denoted as Variable Axis Immersion Lens (VAIL), has been successfully demonstrated. The main attributes of this system include: l) Perpendicular landing at all points of a deflection field > (10 x 10 mm), 2) Elimination of transverse chromatic aberration, 3) High resolution ( < 0.2μm edge slope) over the entire deflection field, 4) Elimination of eddy current effects in the target area, and 5) Total magnetic shielding of the target from external fields.

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