Voltage breakdown sites on thin (< 100 A) MOS capacitors have been identified by the electron beam induced current (EBIC) technique, using a scanning electron microscope (SEM). EBIC spots coincide with voltage breakdown locations and their image intensity can be changed by varying the applied bias or the electron beam accelerating voltage. Total current and the number of EBIC spots were the same in both accumulation and depletion conditions for a fixed beam potential and bias voltage. This suggests that the observed EBIC spots were due to defects in the oxide only. This EBIC method for identifying defects has been found very useful in characterizing thin MOS oxides.
Reimer, J.; Battacharyya, A.; and Ritz, K.
"Electron Beam Induced Current Analysis of Voltage Breakdown Sites in Thin MOS Oxides,"
Scanning Microscopy: Vol. 1
, Article 3.
Available at: https://digitalcommons.usu.edu/microscopy/vol1/iss1/3