Scanning Microscopy


A simple nondestructive method of photolithographically sectioning resist features is presented. The method utilizes the superposition of the normally exposed device features followed by a second exposure of a long wide linear feature, all before the development step. The superposition results in a precise and clean cross-sectioning of the feature, allowing inspection of line-edge profiles and contact windows in addition to measurements at the crucial substrate-resist interface.

Included in

Life Sciences Commons