A simple nondestructive method of photolithographically sectioning resist features is presented. The method utilizes the superposition of the normally exposed device features followed by a second exposure of a long wide linear feature, all before the development step. The superposition results in a precise and clean cross-sectioning of the feature, allowing inspection of line-edge profiles and contact windows in addition to measurements at the crucial substrate-resist interface.
Schrope, D. E.
"Photocleave – A Method for Nondestructive Sectioning of Photoresist Features for Scanning Electron Microscope Inspection,"
Scanning Microscopy: Vol. 1
, Article 20.
Available at: https://digitalcommons.usu.edu/microscopy/vol1/iss3/20