Such scanning electron microscopy modes as electron beam induced current (EBIC), cathodoluminescence (CL) and scanning electron acoustic microscopy (SEAM) are widely used for the characterization of semiconductor specimens and devices. These methods are based on the generation of excess charge carriers by an electron beam inside of the investigated specimen. Usually, theoretical models used to explain the physics of these methods presuppose the low injection case.
However, in experimental investigations, the low injection condition cannot always be observed. Thus, for the interpretation of such measurement results more complicated simulation models have to be used. Such simulations can be carried out by means of numerical simulation programs. Important results of such simulations are how the charge carrier density distributions as well as the potential distributions are influenced by the electron beam induced excess charge carriers inside of investigated semiconductor devices, as for example Gallium Arsenide (GaAs) Metal Semiconductor Field Effect Transistors (MESFET). Additionally, processes such as the recharging of deep levels by the excess charge carriers and the effects of the recharging on the electrical potential distribution can be investigated.
Kaufmann, K. and Balk, L. J.
"Numerical Simulation of the Influence of Electron Beam Induced Excess Charge Carriers on Potential and Charge Carrier Density Distributions in GaAs MESFET,"
Scanning Microscopy: Vol. 10
, Article 5.
Available at: https://digitalcommons.usu.edu/microscopy/vol10/iss1/5