Scanning Tunneling Microscope-Induced Luminescence Spectroscopy on Semiconductor Heterostructures

Authors

M. Pfister, Zurich Research Laboratory
M. B. Johnson, Zurich Research Laboratory
U. Marti, Ecole Polytechnique Fédérale
S. F. Alvarado, Zurich Research LaboratoryFollow
H. W. M. Salemink, Zurich Research Laboratory
D. Martin, Ecole Polytechnique Fédérale
F. Morier-Genoud, Ecole Polytechnique Fédérale
F. K. Reinhart, Ecole Polytechnique Fédérale

Abstract

Scanning tunneling microscope (STM)-induced luminescence is explored as a technique for the characterization of semiconductor quantum wells and quantum wire heterostructures. By injecting minority carriers into the cleaved cross section of these structures, luminescence excitation on a nanometer scale is demonstrated. Using spectrally resolved STM-induced luminescence for the tip placed at various positions across the cleaved heterostructure, it is possible to obtain local spectroscopic information on closely spaced quantum structures.

Recommended Citation

Pfister, M.; Johnson, M. B.; Marti, U.; Alvarado, S. F.; Salemink, H. W. M.; Martin, D.; Morier-Genoud, F.; and Reinhart, F. K. (1995) "Scanning Tunneling Microscope-Induced Luminescence Spectroscopy on Semiconductor Heterostructures," Scanning Microscopy: Vol. 1995: No. 9, Article 6.
Available at: https://digitalcommons.usu.edu/microscopy/vol1995/iss9/6