The Versatility of Scanning Electron Microscopy in Thin Film Device Analysis

Authors

D. J. Drake, Xerox Corporation Webster Research Center
W. G. Hawkins, Xerox Corporation Webster Research Center
R. W. Anderson, Xerox Corporation Webster Research Center

Abstract

The versatility of scanning electron microscopy is shown for many stages of fabrication of thin film transistor driver matrices for actively addressed liquid crystal displays. Electron channeling and Schottky barrier charge collection modes allow rapid assessment of silicon crystal quality. The secondary electron mode allows examination of conductor lead crossover integrity. A form of voltage contrast is used on the completed array to monitor performance of the array prior to liquid crystal filling.

Recommended Citation

Drake, D. J.; Hawkins, W. G.; and Anderson, R. W. (1987) "The Versatility of Scanning Electron Microscopy in Thin Film Device Analysis," Scanning Microscopy: Vol. 2: No. 1, Article 11.
Available at: https://digitalcommons.usu.edu/microscopy/vol2/iss1/11