Scanning Electron Acoustic Microscopy Studies of III-V Compounds: Epitaxial Layers and Devices

Authors

J. F. Bresse, Centre National d'Etudes des Telecommunications Laboratoire de Bagneux

Abstract

Scanning electron acoustic microscopy (SEAM) can be used as a tool to visualize integrated circuit failures caused by lithographic processes, metallic overlayer adherence problems, major subsurface defects, and presence of alloyed compounds formed between ohmic contacts and epitaxial layers. Major defects and doping striations are also visualized by SEAM. For highly doped epitaxial layers a dependence has been found between the doping level and the electron acoustic signal.

Recommended Citation

Bresse, J. F. (1988) "Scanning Electron Acoustic Microscopy Studies of III-V Compounds: Epitaxial Layers and Devices," Scanning Microscopy: Vol. 2: No. 2, Article 16.
Available at: https://digitalcommons.usu.edu/microscopy/vol2/iss2/16