Defect Detection and Thickness Mapping of Passivation Layers on Integrated Circuits Using Energy Dispersive X-Ray Analysis and Image Processing Techniques

Authors

Richard G. Sartore, U.S. Army Laboratory Command

Abstract

The relative thickness of passivation layers has been mapped for integrated circuits by utilizing the penetration voltage method, in conjunction with energy dispersive x-ray analysis (EDXA) and a scanning electron microscope (SEM), to detect defects and map film thickness. The thickness mapping technique was evaluated for area coverage and correlated to size of defective areas. The purpose of this study was to determine optimal operational conditions for fast and accurate defect detection on an integrated circuit for failure analysis and non-destructive process evaluation. Image processing was required to enhance the acquired map and to obtain a calibrated image for relative comparison of thickness non-uniformity. Once the defect is detected, linescan and spot measurements can be used to obtain more accurate characterization of the defect areas. Considerable improvement in the detection and characterization of thickness and hole defects in the passivation layers on integrated circuit devices can be obtained with the use of this method.

Recommended Citation

Sartore, Richard G. (1988) "Defect Detection and Thickness Mapping of Passivation Layers on Integrated Circuits Using Energy Dispersive X-Ray Analysis and Image Processing Techniques," Scanning Microscopy: Vol. 2: No. 3, Article 15.
Available at: https://digitalcommons.usu.edu/microscopy/vol2/iss3/15