The Influence of Analyser Geometry Effects in Scanning Electron Microscope Voltage Contrast Measurements

Authors

Daniel S.H. Chan, National University of Singapore
Teck Seng Low, National University of Singapore
Wai Kin Chim, National University of Singapore
Jacob C. H. Phang, National University of Singapore

Abstract

A computer simulation model used to study specimen dependent and analyser geometry dependent effects is described in this paper. With this model, the influence of the specimen dependent effect on quantitative voltage contrast measurements can be isolated from the analyser geometry dependent effect. Linearization error voltages in quantitative voltage contrast measurements arising from the individual influences of the specimen dependent and analyser geometry dependent effects are presented. The results show that the error component due to very narrow analysers dominate the total linearization error. The same situation arises when the voltage measurement point on the specimen is very near to the edge of the analyser.

Recommended Citation

Chan, Daniel S.H.; Low, Teck Seng; Chim, Wai Kin; and Phang, Jacob C. H. (1988) "The Influence of Analyser Geometry Effects in Scanning Electron Microscope Voltage Contrast Measurements," Scanning Microscopy: Vol. 2: No. 3, Article 18.
Available at: https://digitalcommons.usu.edu/microscopy/vol2/iss3/18