Mechanisms of Cavity Growth During Ion Implantation

Authors

J. H. Evans, University of London

Abstract

This paper will review two separate areas of cavity growth under ion implantation, firstly bias-driven void growth occurring in metals over the range 0.3 to 0.5 of the melting point at high displacement doses, and secondly, bubble growth during inert gas implantation. Interesting phenomena take place in both areas, e.g. void swelling and void lattice formation in the first and blistering, bubble lattices and the precipitation of heavier inert gases in the solid phase in the second. These phenomena will be described together with the extension of mechanisms to other implant species such as carbon where the possibility of precipitation in the diamond phase might be of interest.

Recommended Citation

Evans, J. H. (1993) "Mechanisms of Cavity Growth During Ion Implantation," Scanning Microscopy: Vol. 7: No. 3, Article 8.
Available at: https://digitalcommons.usu.edu/microscopy/vol7/iss3/8