High Resolution Electron Beam Induced Current Measurements in an Scanning Tunneling Microscope on GaAs-MESFET

Authors

P. Koschinski, Bergische Universität Wuppertal
V. Dworak, Bergische Universität Wuppertal
L. J. Balk, Bergische Universität Wuppertal

Abstract

Recently, the first results of electron beam induced current (EBIC) measurements in a scanning tunneling microscope (STM) have been reported. Although the acquired results match with those obtained in conventional EBIC investigations, the interpretation of the obtained results is still restricted solely to a qualitative discussion. In this paper, a quantitative approach is used for two-dimensional numerical simulations of induced currents in GaAs-MESFET leading to a first starting point for a sophisticated interpretation of the dependence of induced currents on experimental and device parameters.

Recommended Citation

Koschinski, P.; Dworak, V.; and Balk, L. J. (1994) "High Resolution Electron Beam Induced Current Measurements in an Scanning Tunneling Microscope on GaAs-MESFET," Scanning Microscopy: Vol. 8: No. 2, Article 3.
Available at: https://digitalcommons.usu.edu/microscopy/vol8/iss2/3