Cathodoluminescence Contrast of Localized Defects Part I. Numerical Model for Simulation

Authors

K. L. Pey, Institute of Microelectronics, Singapore
D. S. H. Chan, National University of Singapore
J. C. H. Phang, National University of Singapore

Abstract

A three-dimensional model has been developed for cathodoluminescence contrast of localized defects in semiconductors. The numerical model incorporates electron-solid interaction effects, charge transport phenomena and optical losses. Electron-solid interaction is modelled by a Monte Carlo method. Three-dimensional continuity equation and derivative boundary conditions are discretized by a central-difference quotients scheme. Localized defects are represented by regions of enhanced non-radiative recombination. The discretized linear difference equations of the boundary value problem are solved by the successive-over-relaxation method. A method for avoiding the divergence problem during the successive-over-relaxation calculation is illustrated. The solutions of the model are compared with the analytical results of several established models.

Recommended Citation

Pey, K. L.; Chan, D. S. H.; and Phang, J. C. H. (1995) "Cathodoluminescence Contrast of Localized Defects Part I. Numerical Model for Simulation," Scanning Microscopy: Vol. 9: No. 2, Article 4.
Available at: https://digitalcommons.usu.edu/microscopy/vol9/iss2/4