Scanning Microscopy
Abstract
This paper discusses the application of electron-beam-induced current (EBIC) technique as a tool which is able to provide at least qualitative microanalytical information not available from other techniques. Three examples are given which demonstrate a sensitivity in the parts per billion (ppb) range: temperature dependence of dislocation contrast as a fingerprint of level of metal (Cu) contamination, iron determination down to 1013 atoms per cm3, and visualization of phosphorous striations in silicon grown by float-zone (FZ) method (FZ-grown Si).
Microanalytical information by EBIC is rather indirect and, usually, identification of the impurity species is not possible. Conclusions about impurity content require supplementary information and a large degree of expertise and may not be unambiguous. Nevertheless, despite these weaknesses, EBIC is considered to be a valuable tool to increase our understanding of impurity behavior, because real trace analysis methods, able to meet sensitivity and spatial requirements, are rare and utilization of indirect methods is necessary, therefore.
Recommended Citation
Kittler, Martin and Seifert, Winfried
(1995)
"A Reflection Upon the Applicability of Electron Beam Induced Current (EBIC) as a Sensitive Microanalytical Technique (ppb range) for Silicon Materials Research,"
Scanning Microscopy: Vol. 9:
No.
3, Article 4.
Available at:
https://digitalcommons.usu.edu/microscopy/vol9/iss3/4