Photoemission Measurement of Equilibrium Segregation at GeSi Surfaces

Authors

J. E. Rowe
D. Mark Riffe, Utah State UniversityFollow
G. K. Wertheim
J. C. Bean

Document Type

Article

Journal/Book Title/Conference

Journal of Applied Physics

Volume

76

Issue

8

Publication Date

1994

First Page

4915

Last Page

4918

Abstract

Photoemission spectroscopy is used to demonstrate that Ge segregates to the first atomic layer of Ge_0.5Si_0.5(100)2×1 and that the second layer is predominantly Si. Comparison of the resolved signals from the dimer atoms of the reconstructed (100)2×1 surfaces of Ge, Si, and equiatomic Ge‐Si alloy shows that the surface layer of the alloy is extremely Ge rich and the second layer is occupied mainly by Si atoms. This result is in good agreement with theoretical predictions.

Comments

Published by American Institute of Physics in Journal of Applied Physics. Publisher PDF is available for download through link above.

Recommended Citation

"Photoemission Measurement of Equilibrium Segregation at GeSi Surfaces," J. E. Rowe, D. M. Riffe, G. K. Wertheim, and J. C. Bean, J. Appl. Phys. 76, 4915 (1994).