Temperature Dependence of Silicon Carrier Effective Masses with Application to FemtosecondReflectivity Measurements

Authors

D. Mark Riffe, Utah State UniversityFollow

Document Type

Article

Journal/Book Title/Conference

Journal of the Optical Society of America B

Volume

19

Issue

5

Publication Date

2002

First Page

1092

Last Page

1100

Abstract

The conductivity effective masses of electrons and holes in Si are calculated for carrier temperatures from 1 to 3000 K. The temperature dependence of the electron mass is calculated by use of a phenomenological model of conduction-band nonparabolicity that has been fitted to experimental measurements of the dependence of the electron conductivity effective mass on carrier concentration. The hole mass is investigated by tight-binding calculations of the valence bands, which have been adjusted to match experimental values of the valence-band curvature parameters at the top of the valence band. The calculations are in excellent agreement with femtosecond-laser reflectivity measurements of the change in optical effective mass as hot carriers cool from 1550 to 300 K.

Comments

Published by the Optical Society of America in Journal of the Optical Society of America B. Publisher PDF is available for download through link above.

© 2002 Optical Society of America

Recommended Citation

D. Riffe, "Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements," J. Opt. Soc. Am. B 19, 1092-1100 (2002).