Electron transport in laterally confined phosphorus δ-layers in silicon

Authors

S. J. Robinson
J. S. Kline
H. J. Wheelwright
J. R. Tucker
C. L. Yang
R. R. Du
B. E. Volland
I. W. Rangelow
T. C. Shen, Utah State UniversityFollow

Document Type

Article

Journal/Book Title/Conference

Physical Review B

Issue

74

Publication Date

2006

Abstract

Two-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic temperatures. Experimental data fit well with two-dimensional weak localization and interaction theory when the phase coherence length is shorter than the smaller dimension of the confinement. Below a transition temperature the wire conductance saturates.

Recommended Citation

S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. Shen, “Electron transport in laterally confined phosphorus δ-layers in silicon”, Phys. Rev. B 74, 153311 (2006).

https://doi.org/10.1103/PhysRevB.74.153311